PART |
Description |
Maker |
IRLML2803GPBF11 |
Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET
|
International Rectifier
|
KRF7401 |
Generation V Technology Ultra Low On-Resistance N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
KRF7301 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
IRF7509PBF IRF7509TRPBF |
Ultra Low On-Resistance HEXFET?Power MOSFET HEXFET㈢Power MOSFET Generation V Technology
|
International Rectifier
|
IRF7404TRPBF |
generation v technology
|
International Rectifier
|
SH10DC40 |
Latest generation MOSFET technology
|
Teledyne Technologies I...
|
IRF7403_04 IRF7403PBF IRF740304 IRF7403PBF-15 |
GENERATION V TECHNOLOGY HEXFET Power MOSFET
|
IRF[International Rectifier]
|
IRF7313PBF IRF7313TRPBF IRF7313PBF-15 |
HEXFET Power MOSFET Generation V Technology
|
IRF[International Rectifier]
|
IDT8T49N008I |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
NPT2021 NPT2022 NPT2024 NPA1006 |
Next generation high power RF semiconductor technology
|
M/A-COM Technology Solu...
|
SGP10N60A SGW10N60A SGP10N60A09 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGB06N60 SGB06N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|